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1

Formation of GaAs/AlAs(001) interfaces studied by scanning tunneling microscopy

Behrend, J., Wassermeier, M., Braun, W., Krispin, P., Ploog, K. H.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 4.45 MB

english, 1996

2

Reconstruction of the GaAs (311) A surface

Wassermeier, M., Sudijono, J., Johnson, M. D., Leung, K. T., Orr, B. G., Däweritz, L., Ploog, K.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 670 KB

english, 1995

3

Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition

Wassermeier, M., Behrend, J., Däweritz, L., Ploog, K.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 1.19 MB

english, 1995

4

SPIE Proceedings [SPIE Semiconductors '92 - Somerset, NJ (Sunday 22 March 1992)] Spectroscopic Characterization Techniques for Semiconductor Technology IV - Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup

Wassermeier, Matthias, Weman, Helge, Miller, Michael L., Petroff, Pierre M., Merz, James L., Glembocki, Orest J.

Year:

1992

Language:

english

File:

PDF, 427 KB

english, 1992

5

Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy

R. Hey, M. Wassermeier, J. Behrend, L. Däweritz, K. Ploog, H. Raidt

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 1.06 MB

english, 1995

6

Scanning tunneling microscopy of the GaAs (311)A surface reconstruction

M. Wassermeier, J. Sudijono, M.D. Johnson, K.T. Leung, B.G. Orr, L. Däweritz, K. Ploog

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 504 KB

english, 1995

7

Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy

J. Behrend, M. Wassermeier, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 347 KB

english, 1996

8

Scanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface

M. Wassermeier, V. Bressler-Hill, R. Maboudian, K. Pond, X.-S. Wang, W.H. Weinberg, P.M. Petroff

Journal:

Surface Science Letters

Year:

1992

Language:

english

File:

PDF, 450 KB

english, 1992

9

Surface morphology of MBE-grown GaAs(001)-(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy

V. Bressler-Hill, R. Maboudian, M. Wassermeier, X.-S. Wang, K. Pond, P.M. Petroff, W.H. Weinberg

Journal:

Surface Science Letters

Year:

1993

Language:

english

File:

PDF, 65 KB

english, 1993

10

Dynamic magnetoconductivity of inversion electrons in periodic MOS-microstructures on Si

H. Pohlmann, M. Wassermeier, J.P. Kotthaus

Journal:

Superlattices and Microstructures

Year:

1986

Language:

english

File:

PDF, 246 KB

english, 1986

11

Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

R. Hey, I. Gorbunova, M. Ramsteiner, M. Wassermeier, L. Däweritz, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 345 KB

english, 1997

12

Minimizing interface contamination in MBE overgrowth

R Hey, M Wassermeier, M Höricke, E Wiebicke, H Kostial

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 106 KB

english, 1999

13

Kinematical RHEED simulation of different structure models for the GaAs (311)A surface

W. Braun, O. Brandt, M. Wassermeier, L. Däweritz, K. Ploog

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 671 KB

english, 1996

14

In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions

M Wassermeier, J Behrend, J.-T Zettler, K Stahrenberg, K.H Ploog

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 427 KB

english, 1996

15

Influence of growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

R Hey, M Ramsteiner, M Wassermeier, K.-J Friedland, B Jenichen, L Däweritz, K.H Ploog

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

1998

Language:

english

File:

PDF, 221 KB

english, 1998

16

Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)

J.-T. Zettler, J. Rumberg, K. Ploska, K. Stahrenberg, M. Pristovsek, W. Richter, M. Wassermeier, P. Schützendübe, J. Behrend, L. Däweritz

Journal:

physica status solidi (a)

Year:

1995

Language:

english

File:

PDF, 677 KB

english, 1995

17

Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering

B. Jenichen, R. Hey, M. Wassermeier, K. Ploog

Journal:

Il Nuovo Cimento D

Year:

1997

Language:

english

File:

PDF, 961 KB

english, 1997

18

Strain compensation in highly carbon doped GaAsAlAs distributed Bragg reflectors

A. Mazuelas, R. Hey, M. Wassermeier, H.T. Grahn

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 378 KB

english, 1997

19

Real space imaging of GaAsAlAs (0 0 1) heterointerfaces

J. Behrend, M. Wassermeier, W. Braun, P. Krispin, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 661 KB

english, 1997

20

Ga-terminated β-GaN(001) surface reconstructions studied by scanning tunneling microscopy

M. Wassermeier, H. Yang, O. Brandt, A. Yamada, J. Behrend, K.H. Ploog

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 849 KB

english, 1998

21

Double period RHEED oscillations during MBE growth of GaAs and AlAs on the GaAs(110) surface

H. Yang, M. Wassermeier, E. Tournié, L. Däweritz, K. Ploog

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 486 KB

english, 1995

22

Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)

J. Rumberg, J.-T. Zettler, K. Stahrenberg, K. Ploska, W. Richter, L. Däweritz, P. Schützendübe, M. Wassermeier

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 503 KB

english, 1995

23

Domain formation on the reconstructed GaAs(001) surface

J. Behrend, M. Wassermeier, L. Däweritz, K.H. Ploog

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 484 KB

english, 1995

24

Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces

J. Behrend, M. Wassermeier, K.H. Ploog

Journal:

Surface Science

Year:

1997

Language:

english

File:

PDF, 966 KB

english, 1997

25

Atomic structure of the surface reconstructions of zincblende GaN(001)

M Wassermeier, A Yamada, H Yang, O Brandt, J Behrend, K.H Ploog

Journal:

Surface Science

Year:

1997

Language:

english

File:

PDF, 1.14 MB

english, 1997

26

Controlled anisotropic ordering of Be deposited on the GaAs(001) surface

H. Oigawa, M. Wassermeier, J. Behrend, L. Däweritz, K.H. Ploog

Journal:

Surface Science

Year:

1998

Language:

english

File:

PDF, 872 KB

english, 1998

27

Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition

H. Oigawa, M. Wassermeier, J. Behrend, L. Däweritz, K.H. Ploog

Journal:

Surface Science

Year:

1997

Language:

english

File:

PDF, 648 KB

english, 1997

28

Submonolayer Si deposition at low temperatures on the GaAs(001)-(2×4) surface studied by scanning tunneling microscopy

M Wassermeier, S Kellermann, J Behrend, L Däweritz, K Ploog

Journal:

Surface Science

Year:

1998

Language:

english

File:

PDF, 412 KB

english, 1998

29

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

Yang, H., Brandt, O., Wassermeier, M., Behrend, J., Schonherr, H. P., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 473 KB

english, 1996

30

Intersubband resonances in quasi-one-dimensional channels

J.P. Kotthaus, W. Hansen, H. Pohlmann, M. Wassermeier, K. Ploog

Journal:

Surface Science

Year:

1988

Language:

english

File:

PDF, 835 KB

english, 1988

31

Edge magnetoplasmons in the quantum Hall effect regime

V.K. Talyanskii, M. Wassermeier, A. Wixforth, J. Oshinowo, J.P. Kotthaus, I.E. Batov, G. Weimann, H. Nickel, W. Schlapp

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 290 KB

english, 1990

32

Scanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface

M. Wassermeier, V. Bressler-Hill, R. Maboudian, K. Pond, X.-S. Wang, W.H. Weinberg, P.M. Petroff

Journal:

Surface Science

Year:

1992

Language:

english

File:

PDF, 505 KB

english, 1992

33

Tunneling spectroscopy on the GaAs(110) surface: Effect of dopant concentration

R. Maboudian, K. Pond, V. Bressler-Hill, M. Wassermeier, P.M. Petroff, G.A.D. Briggs, W.H. Weinberg

Journal:

Surface Science

Year:

1992

Language:

english

File:

PDF, 837 KB

english, 1992

34

Surface morphology of MBE-grown GaAs(001)−(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy

V. Bressler-Hill, R. Maboudian, M. Wassermeier, X.-S. Wang, K. Pond, P.M. Petroff, W.H. Weinberg

Journal:

Surface Science

Year:

1993

Language:

english

File:

PDF, 1.58 MB

english, 1993

35

Characterization of zinc blende In[sub x]Ga[sub 1âx]N grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001)

MuÌllhaÌuser, J. R., Jenichen, B., Wassermeier, M., Brandt, O., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 1.47 MB

english, 1997

36

In situ spectroscopic ellipsometry of GaAs(001) surface reconstructions

Wassermeier, M., Behrend, J., Ploog, K. H., Zettler, J.-T., Stahrenberg, K., Richter, W.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 101 KB

english, 1996

37

Lateral band gap modulation by buried stressor structures in III–V compounds semiconductor quantum-well structures

Xu, Z., Wassermeier, M., Li, Y. J., Petroff, P. M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 643 KB

english, 1992

38

Edge magnetoplasmons in the fractional-quantum-Hall-effect regime

Wassermeier, M., Oshinowo, J., Kotthaus, J. P., MacDonald, A. H., Foxon, C. T., Harris, J. J.

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 173 KB

english, 1990

39

Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy

Brandt, Oliver, Yang, Hui, Trampert, Achim, Wassermeier, Matthias, Ploog, Klaus H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 1.29 MB

english, 1997

40

As heterostructures

Wixforth, A., Scriba, J., Wassermeier, M., Kotthaus, J. P., Weimann, G., Schlapp, W.

Journal:

Physical Review B

Year:

1989

Language:

english

File:

PDF, 805 KB

english, 1989

41

Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth

M. Krishnamurthy, M. Wassermeier, D. R. M. Williams, P. M. Petroff

Year:

1993

Language:

english

File:

PDF, 708 KB

english, 1993

42

Growth mechanism of GaAs on (110) GaAs studied by high-energy electron diffraction and atomic force microscopy

Wassermeier, M.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

1994

Language:

english

File:

PDF, 875 KB

english, 1994

43

Interaction of surface acoustic waves with a two-dimensional electron system in a LiNbO3-GaAs/AlGaAs sandwich structure

Wixforth, A., Scriba, J., Wassermeier, M., Kotthaus, J. P., Weimann, G., Schlapp, W.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 603 KB

english, 1988

44

Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique

Wassermeier, M., Weman, H., Miller, M. S., Petroff, P. M., Merz, J. L.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 954 KB

english, 1992

45

Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions

Wassermeier, M.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

1991

Language:

english

File:

PDF, 787 KB

english, 1991

46

Room-Temperature Spin Injection from Fe into GaAs

Zhu, H. J., Ramsteiner, M., Kostial, H., Wassermeier, M., Schönherr, H.-P., Ploog, K. H.

Journal:

Physical Review Letters

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

47

Grazing-incidence x-ray scattering from stepped interfaces in AlAs/GaAs superlattices

Kondrashkina, E. A., Stepanov, S. A., Opitz, R., Schmidbauer, M., Köhler, R., Hey, R., Wassermeier, M., Novikov, D. V.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 2.13 MB

english, 1997

48

Regrowth and annealing of In 0.22 Ga 0.78 As and GaAs quantum well graded-index separate confinement heterostructure lasers

Wassermeier, M, Hey, R, Höricke, M, Wiebicke, E

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 75 KB

english, 2001

49

Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth

M. Wassermeier, R. Hey, M. Höricke, E. Wiebicke, H. Kostial

Year:

1999

Language:

english

File:

PDF, 500 KB

english, 1999

50

Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

Aspnes, D. E., Bhat, R., Colas, E., Florez, L. T., Gregory, S., Harbison, J. P., Kamiya, I., Quinn, W. E., Schwarz, S. A., Tanaka, H., Wassermeier, M.

Journal:

MRS Proceedings

Year:

1991

Language:

english

File:

PDF, 773 KB

english, 1991

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